preliminary tsm 2328 100v n-channel mosfet 1/4 version: preliminary sot - 2 3 product summary v ds (v) r ds(on) (m ) i d (a) 100 250 @ v gs =10v 1.5 general description the tsm2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extr emely efficient and cost-effectiveness device. the tsm2328 is universally used for all commercial- industrial applications features low r ds(on) 250m (max.) low gate charge typical @ 11.1nc (typ.) high performance trench technology ordering information part no. package packing tsm2328cx rf sot-23 3kpcs / 7 reel absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current i d 1.5 a pulsed drain current * i dm 6 a continuous source current (diode conduction) i s 0.6 a total power dissipation @ t a = 25 o c p d 1.38 w operating junction temperature t j 150 oc storage temperature range t stg -55 to +150 o c * limited by maximum junction temperature thermal performance parameter symbol limit unit thermal resistance - junction to foot r ? jf 55 o c/w thermal resistance - junction to ambient r ? ja 100 o c/w note 1: surface mounted on 1 x 1 fr4 note 2: pules width limited by maximum junction temperatur e block diagram n-channel mosfet pin definition : 1. gate 2. source 3. drain
preliminary tsm 2328 100v n-channel mosfet 2/4 version: preliminary electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 100 -- -- v drain-source on-state resistance v gs = 10v, i d = 1.5a r ds(on) -- -- 250 m gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 1.0 -- 2.5 v zero gate voltage drain current v ds = 80v, v gs = 0v i dss -- -- 1 ua gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na on-state drain current v ds = 5v, v gs = 10v i d(on) 6 -- -- a forward transfer conductance v ds = 15v, i d = 1.5a g fs -- 4 -- s diode forward voltage i s = 1a, v gs = 0v v sd -- 1.2 -- v dynamic (1) total gate charge v ds = 80v, i d = 1.5a, v gs = 5v q g -- 11.1 -- nc gate-source charge q gs -- 4.4 -- gate-drain charge q gd -- 3 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 975 -- pf output capacitance c oss -- 38 -- reverse transfer capacitance c rss -- 27 -- switching (2) turn-on delay time v dd = 30v, i d = 1a, v gen = 10v, r l =30 , r g =6 t d(on) -- 9 -- ns turn-on rise time t r -- 9.4 -- turn-off delay time t d(off) -- 26.8 -- turn-off fall time t f -- 2.6 -- note 1: pulse test: pulse width 300us, duty cycle 2% note 2: guaranteed by design, not subject to production te sting
preliminary tsm 2328 100v n-channel mosfet 3/4 version: preliminary sot-23 mechanical drawing sot-23 dimension dim millimeters inches min max min max. a 0.95 bsc 0.037 bsc a1 1.9 bsc 0.074 bsc b 2.60 3.00 0.102 0.118 c 1.40 1.70 0.055 0.067 d 2.80 3.10 0.110 0.122 e 1.00 1.30 0.039 0.051 f 0.00 0.10 0.000 0.004 g 0.35 0.50 0.014 0.020 h 0.10 0.20 0.004 0.008 i 0.30 0.60 0.012 0.024 j 5o 10o 5o 10o
preliminary tsm 2328 100v n-channel mosfet 4/4 version: preliminary notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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